Description of the organisation
CEA (Commissariat à l’Energie Atomique et aux Energies Alternatives) is a French Governmental Research Organisation (15000 employees) devoted to both fundamental and industrial Research & Development.
Within CEA, CEA-LETI is one of the major European research centres for applied electronics. It is located in Grenoble where it operates 11000 m²-State-of-the-Art CMOS clean rooms, 200 and 300 mm wafer size, and the 200 mm MEMS microsystems platform, with equipment worth some 200 M€. Nearly 1,600 men and women are serving innovation and the transfer of technology in key domains, with ST microelectronics as the main industrial partner. CEA-LETI has sparked the creation of nearly thirty high-technology start-ups, including Soitec, world leader in the development/ production of Silicon on insulator wafers.
As a pioneer in Research & Development in Silicon Photonics (2002) CEA-Leti has developed strong expertise and know how in devices’ design, integration and test, including Ge-on-Silicon photodetectors and heterogeneous III/V-on-Silicon lasers. Having achieved the development of world-record-output-power lasers, and 200mm-wafer-size processing, CEA is considered as the two leading institutes in the field with (University of California Santa Barbara).
Role in the project
Within the COSMICC project, CEA-Leti will coordinate and manage the project. It will get administrative support from Ayming. It will support the demonstration of innovative technologies with different TRLs (SiN/Si, III-V and SiN-on-Si, and SiGe), will design, integrate and tests the lasers on the new SiN-on-Si platform, will design and test the advanced slow wave modulators. CEA will contribute to dissemination and standardisation activities & will early set up an exploitation plan with the industrial partners of the consortium.
Key people involved
Sylvie MENEZO, Female technical and strategic advisor (member of the General Assembly)
After receiving the Ph.D. degree in 1999 in optoelectronics (integrated-III/V-on-InP-multi-wavelength-laser-source for telecom applications), from the Centre National d’Etude des Télécommunications (France Telecom), S. Menezo worked and led R&D teams in industry (Alcatel-CRC-Telecom-France, where she completed the transfer of a laser pump to production, and Sercel-Compagnie Générale de Géophysique-Oil and Gaz sector-France and USA). She joined CEA-Leti research institute in 2010 having, as main topics of research, design and prototyping of optical communication links based on Silicon Photonic and CMOS electronic integrated circuits. She led the Silicon photonics lab at CEA-Leti from 2012 to mid-2014, as well as the IRT Nanoelec-Photonics French Program. She is now in charge of developing R&D Partnerships and Industrial Business in the frame of bilateral or collaborative programs dedicated to the development of Integrated Photonics-based solutions.
She received an Executive MBA degree in 2007 from Audencia Nantes School of Management (part time Exec MBA while at Sercel).
Recent references: Program subcommittee member of ECOC since 2015, OFC since 2016; Invited talks at OIC 2014, MIT Microphotonics Center- Fall meeting 2013, ECOC 2013; more than 13 patents, and several recent PTL, JSTQE, and OE papers related to Silicon Photonics.
Dr. Ségolène Olivier
(female) graduated from “Ecole Supérieure de Physique et Chimie industrielles de la Ville de Paris” in 1999. She received the PhD degree in 2002 from the University of Paris in the field of photonics. From 1999 to 2005, she has been involved in the development of photonic crystal devices for photonic integrated circuits and single photon sources for quantum cryptography. She joined CEA-Leti in 2005 where she worked on the development of back-end processes and material for microelectronic copper interconnects in collaboration with STmicroelectronics. In 2008, she moved to the field of optical data storage, where she was coordinating the FP7 project SURPASS and was involved in the FP7 project NANOMAGMA on magneto-plasmonic devices. Since 2012, she is working in silicon photonics, leading a project in collaboration with III-V Lab on the development of integrated transmitters on silicon for WDM applications. Her current research interests also include the development of low-consumption optical modulators on Si and Ge. She is the author or co-author of more than 80 papers in scientific journals and international conference proceedings and holds several patents.
B. Ben Bakir, Male
Badhise Ben Bakir received the Master’s degree in Physics from Université Claude Bernard, Lyon, France, in 2003, and the Ph.D. degree in Optical and Electrical engineering from Ecole Centrale de Lyon, Ecully, France, in 2006. In 2007, he joined the Optronics Department, at CEA-Leti. He is the author and coauthor of more than 120 papers in international journals and conferences. He holds 17 patents. His current research interests include physics of optoelectronic devices and nanostructures, and micro-nano-fabrication related to Si and III–V-based materials for hybrid optical integrated circuits. He is currently the Chief technologist of the Silicon Photonics laboratory.
C. Sciancalepore, Male
Corrado Sciancalepore received a MSc in physical engineering from Polytechnic University of Turin, Italy, in 2009, and a PhD in optical and electrical engineering from Ecole Centrale de Lyon, France, in 2012. In late 2013 he joined as permanent researcher the Laboratory of Electronics and Information technology (CEA-LETI) based in Grenoble, France. His research activity focuses on the physics of optoelectronic devices, silicon photonics integrated circuits (Si-PICs), photonic crystals and advanced integrated optics, as well as VCSEL photonics.
J.M. Hartmann, Male
J-M. Hartman obtained his MSc in Physics from Joseph Fourier University (Grenoble, France) in 1993. During his PhD in CEA-INaC, Grenoble, he studied the Solid Source - Molecular Beam Epitaxy of CdTe/MnTe and CdTe/MgTe heterostructures for optical purposes (1994 to 1997). As a Post-Doctoral fellow in Imperial College, London, UK (1997 to 1999), he studied the Gas Source - Molecular Beam Epitaxy of Si/SiGe heterostructures for MODFET purposes. He then joined CEA-LETI, Grenoble, for a permanent position as a Group IV epitaxy researcher in 1999. Since then, he has grown doped Si/SiGeC heterostructures for nanoelectronics and optoelectronics, thanks to Reduced Pressure - Chemical Vapour Deposition intrinsic and IN-SITU. He is the author or co-author of more than 350 publications in regular journals or conference proceedings. He is very much involved as an International Advisory Committee member or a program chairman in the running of the ICSI, ISTDM and ECS SiGe conference series.
S. Bernabé, Male
Stéphane Bernabé received the M.Sc. degree in Physics and Photonics engineering from the University Louis Pasteur of Strasbourg (Ecole Nationale Supérieure de Physique de Strasbourg), France, in 1997. He has served as R&D engineer and project leader in the field of optoelectronic packaging in companies Wavetek Wandel Goltermann, Radiall and Intexys Photonics. He was involved in several FP7 projects dealing with optoelectronic based devices (ODIN, MOSEL, MEPHISTO). In 2005 he joined CEA-LETI in Grenoble, France, in the Optics and Photonics Department, and was involved in several activities dealing with optoelectronic devices packaging (Photonic Integrated Circuits, LED modules, components reliability, multiphysics modelling). He is now project leader of several PIC-based modules projects dealing with telecom and access transmitters (FP7 FABULOUS, ANR ULTIMATE), datacom transceivers and Optical networks on chip (oNoC). He is author/co-author of more than 25 publications or conference proceedings and more than 10 patents in his field of expertise.
Dr Christophe JANY (male)
Christophe Jany received the Ph.D. degree in materials science from the University of Paris XIII, France, in 1998. He studied thin film technology of CVD Diamond on Silicon. He joined the Alcatel Research & Innovation Center in Marcoussis in 1999. He has been engaged in the field of development of optical integrated technology for III-V semiconductors devices, including high speed (> 40 Gb/s) integrated lasers and electro-absorption modulators. Within Bell Labs France, he contributed to the development of new InP-based platforms integration using SAG and SIBH Technologies. Then, with III-V Lab, he became expert in the field of photonic integration with over 14 years of experience for manufacturing components: InP-based Photonic Integrated Circuits (PICs). For 5 years, he develops the hybrid technology III-V on SOI, leading to the Silicon Photonics chips (Laser source). He main focuses to make compatible manufacturing III-V wafers bonded on ‘CMOS’ material. In 2013, he joined CEA-Leti to further develop fabrication technology of III-V materials on SOI Wafers (100mm-200mm diam.), mainly for silicon photonics applications.